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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2081 DESCRIPTION *High DC Current Gain: hFE= 2000(Min)@ (VCE= 4V, IC= 5A) *Large Current Capability *Complement to Type 2SB1259 APPLICATIONS *Driver for solenoid, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 120 V 120 V 6 V 10 A 15 A 1 A .cn mi e IC Collector Current-Continuous ICM Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature PC 30 W TJ 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2081 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 5mA B 2.0 V A ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 5A; VCE= 4V COB Output Capacitance fT Current-Gain--Bandwidth Product w w scs .i w IE= 0; VCB= 10V; ftest= 1.0MHz IE= -0.5A; VCE= 12V .cn mi e 2000 95 pF 60 MHz isc Websitewww.iscsemi.cn 2 |
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